Molecular Dynamic Studies of the Charge-Transfer Reaction by the Crossed-Molecule-Ionic Beam Method 用交叉分子&离子束法研究电荷转移反应分子动态学
The fluorine atom reaction with trans-1,3-bu ta diene has been investigated by using the crossed molecular beam method. 利用改进型通用交叉分子束装置和脉冲直流放电产生脉冲氟原子束实验方法,研究了氟原子和1,3丁二烯分子的反应散射。
The gas phase reaction of Cu plasma and ethanol clusters is studied by the laser ablation molecular beam ( LAMB) method. 用激光溅射-分子束技术研究了气相中Cu的等离子体与乙醇分子团簇的反应。
SrTiO_ ( 3)( STO) thin films were fabricated on LaAlO_ ( 3) ( 100) single crystal substrates by the laser molecular beam epitaxy method. 利用激光分子束外延技术在LaAlO3(100)单晶基片表面生长SrTiO3(STO)薄膜。
The gas phase reactions of Cu+? Ag+? Au+ with ethanethiol have been studied by using laser ablation molecular beam method in conjunction with a reflection time of flight mass spectrometer. 利用激光溅射分子束的技术,结合反射飞行时间质谱计,研究了Cu+、Ag+、Au+与乙硫醇的气相化学反应。
The gas phase reaction of the singly positive charged aluminum ion with ethanethiol molecule clusters was investigated by the laser ablation molecular beam method. The cluster ions composed of Al+ and 1~ 6 ethanethiol molecules are produced. 利用激光溅射-分子束的方法研究了Al+和乙硫醇的气相化学反应,结果观察到了Al+与1~6个乙硫醇分子形成的团簇离子。
By combining a crossed molecular beam method with a time-sliced ion velocity imaging technique, the product state-resolved pair-correlated differential cross sections were revealed directly from the measurements. 结合时间切片离子速度成像与交叉分子束技术,可直接测得产物态分辨且成对相关的角分布。
The Laser Molecular Beam Epitaxy ( Laser MBE) is a new growth method of the films and the superlattices based on the conventional MBE and the pulsed Laser Deposition ( PLD). 激光分子束外延是在传统分子束外延和普通激光淀积技术基础上发展起来的一种最新制备薄膜和人工超晶格方法。
The ultrahigh vacuum measurement standard of PTB-the molecular beam method ( 10~ (-10) Pa) is the best one in the world. PTB的超高真空计量标准&分子束法(10~(-10)Pa)为国际最好水平。
Quantitative Auger analysis of In_xGa_ ( 1-x) As grown by molecular beam epitaxy ( MBE) havebeen performed with an internal standard element method. 采用As元素作为内标对分子束外延生长InxGa(1-x)As进行定量俄歇分析。
Mn doped GaAs prepared by low temperature molecular beam epitaxy method is one of the most matured diluted ferromagnetic semiconductor systems. 低温分子束外延技术制备的Mn掺杂GaAs是目前研究比较成熟的稀释磁性半导体体系。